International Journal of Chemical Studies
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P-ISSN: 2349-8528, E-ISSN: 2321-4902   |   Impact Factor: GIF: 0.565

Vol. 8, Issue 4 (2020)

Effect of gamma radiation on germination and seedling growth in field bean [Lablab purpureus var. lignosus (L.) Prain] cv.TFB-2


Author(s): KN Mahesha, S Sadarunnisa, P Syam Sundar Reddy, C Madhumathi and B Tanuja Priya

Abstract: Induced mutations play a significant role in the crop improvement of vegetable crops. An experiment was conducted at College of Horticulture, Anantharajupeta with an objective to establish the radiation quality and dose range for improvement of field bean. The seeds of TFB-2, a popular variety of field bean were treated with different doses of gamma rays viz., 10kR, 20kR, 30kR, 40kR, 50kR and 60kR using cobalt (60Co) as a source of radiation. The irradiated seeds along with untreated control were sown in both petri plates and polybags. Germination percentage in petri plates were assessed after seven days. The germination percentage ranged from 35.55% to 80% in petri plates and 33.33% to 80.95% in polybags for different doses of gamma rays. In case of untreated control the germination percentage in petri plates and polybags was 93.33% and 93.65% respectively. The growth of the seedlings in polybags was assessed after 30 days. A decrease in the germination and retarded seedling growth (roots and shoot length) in irradiated plants as compared to control was observed. A gradual decline in germination percentage and seedling growth was recorded with increase in irradiation dose. Lowest seedling growth (26.56 cm) was recorded in T6 (60kR) while the highest seedling growth (46.56 cm) was recorded in T1 (10kR).

DOI: 10.22271/chemi.2020.v8.i4ac.10014

Pages: 2527-2531  |  446 Views  93 Downloads

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How to cite this article:
KN Mahesha, S Sadarunnisa, P Syam Sundar Reddy, C Madhumathi, B Tanuja Priya. Effect of gamma radiation on germination and seedling growth in field bean [Lablab purpureus var. lignosus (L.) Prain] cv.TFB-2. Int J Chem Stud 2020;8(4):2527-2531. DOI: 10.22271/chemi.2020.v8.i4ac.10014
 

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